NXP Semiconductors
PESD5V0L1ULD
Low capacitance unidirectional ESD protection diode
001aaa631
120
I PP
(%)
80
100 % I PP ; 8 μ s
e ? t
001aaa630
I PP
100 %
90 %
5 0 % I PP ; 20 μ s
40
10 %
0
0
10
20
30
t ( μ s)
40
t r = 0.7 ns to 1 ns
30 ns
60 ns
t
Fig 2.
8/20 μ s pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8. Characteristics
T amb = 25 ° C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V RWM
reverse standoff
-
-
5
V
voltage
I RM
reverse leakage current V RWM = 5 V
-
10
100
nA
V BR
C d
breakdown voltage
diode capacitance
I R = 5 mA
f = 1 MHz; V R = 0 V
6.4
-
6.8
25
7.2
30
V
pF
V CL
clamping voltage
[1][2]
I PP = 1 A
I PP = 3.5 A
-
-
-
-
9
12
V
V
r dyn
dynamic resistance
I R = 10 A
-
0.7
-
Ω
[1]
[2]
[3]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t p = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0L1ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 April 2011
? NXP B.V. 2011. All rights reserved.
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